FinFET Device and Method

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

FinFET Device and Method - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240290867 titled 'FinFET Device and Method

The semiconductor device described in the abstract includes a fin extending from a substrate, a gate stack over and along a sidewall of the fin, a spacer along a first sidewall of the gate stack and the sidewall of the fin, a dummy gate material along the sidewall of the fin between the spacer and the gate stack, and a first epitaxial source/drain region in the fin adjacent to the gate stack.

Fin extending from a substrate
Gate stack over and along a sidewall of the fin
Spacer along a first sidewall of the gate stack and the fin
Dummy gate material between the spacer and the gate stack
First epitaxial source/drain region in the fin adjacent to the gate stack

Potential Applications: - Advanced semiconductor devices - High-performance electronics - Nanotechnology research

Problems Solved: - Enhancing device performance - Improving integration of components - Increasing efficiency of semiconductor devices

Benefits: - Higher speed and efficiency - Enhanced functionality - Improved overall performance

Commercial Applications: Title: Advanced Semiconductor Devices for High-Performance Electronics This technology can be utilized in the development of cutting-edge electronics for various industries, including telecommunications, computing, and consumer electronics. The market implications include the potential for faster and more reliable devices that can meet the growing demands of modern technology.

Questions about the technology: 1. How does the integration of the dummy gate material improve the performance of the semiconductor device? 2. What are the specific advantages of having a first epitaxial source/drain region in the fin adjacent to the gate stack?

Original Abstract Submitted

a semiconductor device includes a fin extending from a substrate, a gate stack over and along a sidewall of the fin, a spacer along a first sidewall of the gate stack and the sidewall of the fin, a dummy gate material along the sidewall of the fin, wherein the dummy gate material is between the spacer and the gate stack, and a first epitaxial source/drain region in the fin and adjacent the gate stack.