WRAP-AROUND SILICIDE LAYER

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Meng-Huan Jao of Taichung City (TW)

Chun-Yuan Chen of HsinChu (TW)

Huan-Chieh Su of Changhua County (TW)

Chih-Hao Wang of Hsinchu County (TW)

WRAP-AROUND SILICIDE LAYER - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240290849 titled 'WRAP-AROUND SILICIDE LAYER

The abstract of this patent application describes a semiconductor structure that includes various features such as a channel region, gate structure, source/drain feature, backside silicide layer, and backside contact feature.

The semiconductor structure has a channel region rising above an isolation feature.
The gate structure wraps over the channel region.
The source/drain feature is in contact with a sidewall of the channel region.
A backside silicide layer is on the bottom surface of the source/drain feature.
A backside contact feature extends through the isolation feature to contact the backside silicide layer.
The sidewall of the backside contact feature is spaced apart from the isolation feature by a first backside contact etch stop layer (CESL) and a second backside CESL.

Potential Applications: - This semiconductor structure could be used in the manufacturing of advanced electronic devices. - It may find applications in the development of high-performance integrated circuits.

Problems Solved: - The structure addresses the need for improved contact features in semiconductor devices. - It enhances the performance and reliability of electronic components.

Benefits: - Improved electrical connectivity and efficiency. - Enhanced overall performance of semiconductor devices. - Greater reliability and longevity of electronic components.

Commercial Applications: - This technology could be utilized in the production of cutting-edge smartphones, tablets, and other consumer electronics. - It may also have applications in the automotive industry for advanced driver assistance systems.

Prior Art: - Researchers and engineers working in the field of semiconductor technology may find relevant prior art in studies related to contact features in semiconductor devices.

Frequently Updated Research: - Researchers in the semiconductor industry are constantly exploring new materials and processes to enhance the performance of electronic devices. Stay updated on the latest advancements in semiconductor technology for potential improvements in this area.

Questions about Semiconductor Structures: 1. How does the backside silicide layer contribute to the performance of the semiconductor structure?

  The backside silicide layer helps improve electrical conductivity and contact resistance in the device, enhancing overall performance.

2. What are the potential challenges in implementing this semiconductor structure in large-scale production?

  Large-scale production of semiconductor structures may face challenges related to manufacturing consistency, cost-effectiveness, and scalability.

Original Abstract Submitted

semiconductor structures and processes are provided. a semiconductor structure according to the present disclosure includes a channel region of a semiconductor body rising above an isolation feature, a gate structure wrapping over the channel region, a source/drain feature in contact with a sidewall of the channel region, a backside silicide layer disposed on a bottom surface of the source/drain feature, and a backside contact feature extending through the isolation feature to contact a bottom surface of the backside silicide layer. a sidewall of the backside contact feature is spaced apart from the isolation feature by a first backside contact etch stop layer (cesl) and a second backside cesl.