DETECTION USING SEMICONDUCTOR DETECTOR

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Ya-Chin King of Taipei City (TW)

Chrong-Jung Lin of Hsinchu City (TW)

Burn-Jeng Lin of Hsinchu City (TW)

Chien-Ping Wang of Kaohsiung City (TW)

Shao-Hua Wang of Taoyuan City (TW)

Chun-Lin Chang of Hsinchu County (TW)

Li-Jui Chen of Hsinchu City (TW)

DETECTION USING SEMICONDUCTOR DETECTOR - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240290575 titled 'DETECTION USING SEMICONDUCTOR DETECTOR

The semiconductor structure described in the patent application consists of a substrate, a semiconductor detector, a peripheral circuit, and a multilayer interconnection structure. The substrate is divided into a sensing region and a peripheral region, with the semiconductor detector located on the sensing region. The semiconductor detector comprises three detector units, each consisting of two transistors connected in series, with the gate of the second transistor being a floating gate. The peripheral circuit is situated on the peripheral region of the substrate and is connected to the semiconductor detector. The multilayer interconnection structure, positioned above the substrate, has a greater number of metallization layers directly above the peripheral circuit compared to those above the semiconductor detector.

The semiconductor structure includes a unique configuration of detector units with floating gates, enhancing its sensing capabilities.
The multilayer interconnection structure's design optimizes the connection between the peripheral circuit and the semiconductor detector.
The division of the substrate into sensing and peripheral regions allows for efficient placement of the semiconductor components.
The use of series-connected transistors in the detector units improves the overall performance of the semiconductor structure.
The innovative design of the semiconductor structure enables advanced functionality and performance in various applications.

Potential Applications: - This semiconductor structure can be utilized in medical devices for sensing and monitoring purposes. - It can also be integrated into security systems for improved detection capabilities. - The structure's design is suitable for use in industrial automation and control systems.

Problems Solved: - Enhanced sensing capabilities due to the unique configuration of detector units. - Improved connectivity and performance through the multilayer interconnection structure. - Efficient placement of semiconductor components on the substrate.

Benefits: - Advanced sensing capabilities for various applications. - Improved performance and connectivity in semiconductor devices. - Enhanced functionality and reliability in sensing and monitoring systems.

Commercial Applications: Title: Advanced Semiconductor Structure for Enhanced Sensing and Connectivity This technology can be commercialized in the fields of medical devices, security systems, and industrial automation for improved sensing and monitoring capabilities. The innovative design offers advanced functionality and performance, making it a valuable asset in various industries.

Questions about the Semiconductor Structure: 1. How does the unique configuration of detector units with floating gates improve sensing capabilities? 2. What are the potential applications of this semiconductor structure in the medical field?

Original Abstract Submitted

a semiconductor structure includes a substrate, a semiconductor detector, a peripheral circuit, and a multilayer interconnection structure. the substrate has a sensing region and a peripheral region. the semiconductor detector is on the sensing region of the substrate. the semiconductor detector includes a first detector unit, a second detector unit, and a third detector unit. each of the first, second, third detector units includes a first transistor and a second transistor connected in series. a gate of the second transistor is a floating gate. the peripheral circuit is on the peripheral region of the substrate and is coupled to the semiconductor detector. the multilayer interconnection structure is over the substrate. a first number of metallization layers of the multilayer interconnection structure directly above the peripheral circuit is greater than a second number of metallization layers of the multilayer interconnection structure directly above the semiconductor detector.