Taiwan semiconductor manufacturing company, ltd. (20240266166). DIELECTRIC DENSIFICATION simplified abstract
DIELECTRIC DENSIFICATION
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Cheng-Ming Lin of Kaohsiung City (TW)
Szu-Hua Chen of Tainan City (TW)
Wei-Yen Woon of Taoyuan City (TW)
DIELECTRIC DENSIFICATION - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240266166 titled 'DIELECTRIC DENSIFICATION
The abstract of the patent application describes a method for treating a dielectric material with a gaseous species carried in a supercritical fluid to reduce its thickness on a semiconductor structure.
- The method involves depositing a dielectric material on a semiconductor structure.
- The dielectric material is then treated with a gaseous species carried in a supercritical fluid.
- After the treatment, the thickness of the dielectric material is reduced.
Potential Applications: - This technology can be applied in the semiconductor industry for the fabrication of advanced electronic devices. - It can improve the performance and reliability of integrated circuits by enhancing the dielectric properties of materials.
Problems Solved: - Provides a low thermal budget solution for dielectric material treatment. - Enables precise control over the thickness of the dielectric material.
Benefits: - Enhances the efficiency of semiconductor manufacturing processes. - Reduces the overall cost of production by optimizing material usage.
Commercial Applications: "Supercritical fluid treatment for dielectric materials in semiconductor manufacturing"
Questions about the technology: 1. How does the use of a gaseous species in a supercritical fluid improve the treatment of dielectric materials? 2. What are the potential cost savings associated with reducing the thickness of dielectric materials in semiconductor manufacturing processes?
Original Abstract Submitted
a low thermal budget dielectric material treatment is provided. an example method of the present disclosure includes providing a semiconductor structure, depositing a dielectric material over the semiconductor structure, treating the dielectric material with a gaseous species carried in a supercritical fluid, and after the treating, reducing a thickness of the dielectric material.