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Taiwan semiconductor manufacturing company, ltd. (20240262096). LAMINATION APPARATUS AND METHOD simplified abstract

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LAMINATION APPARATUS AND METHOD

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Yu-Ting Chiu of Hsinchu County (TW)

Ying-Jui Huang of Hsinchu County (TW)

Chien-Ling Hwang of Hsinchu City (TW)

Ching-Hua Hsieh of Hsinchu (TW)

LAMINATION APPARATUS AND METHOD - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240262096 titled 'LAMINATION APPARATUS AND METHOD

Simplified Explanation: The patent application describes a method and apparatus for laminating a film to a wafer in a process chamber.

  • Achieving a vacuum state and process temperature in the chamber
  • Laminating the film to the wafer's surface

Key Features and Innovation:

  • Method for laminating film to wafer in a controlled environment
  • Use of vacuum state and process temperature for lamination process

Potential Applications:

  • Semiconductor manufacturing
  • Microelectronics production

Problems Solved:

  • Ensuring precise lamination of film to wafer
  • Controlling environmental factors during lamination process

Benefits:

  • Improved quality and reliability of wafer-film lamination
  • Enhanced performance of semiconductor devices

Commercial Applications: The technology can be used in the semiconductor industry for manufacturing high-quality electronic components.

Questions about Lamination Process: 1. How does the vacuum state contribute to the lamination process? 2. What are the advantages of using controlled process temperature during lamination?

Frequently Updated Research: Ongoing research focuses on optimizing the lamination process for increased efficiency and quality in semiconductor manufacturing.


Original Abstract Submitted

a method for laminating a film to a wafer and apparatus for performing the lamination process are disclosed. the method includes providing the wafer and the film in a process chamber where the wafer and the film are separated from each other, achieving a vacuum state and a process temperature in the process chamber, and laminating the film to contact a surface of the wafer.

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