Taiwan semiconductor manufacturing company, ltd. (20240258311). SEMICONDUCTOR DEVICE HAVING NANOSHEETS simplified abstract
SEMICONDUCTOR DEVICE HAVING NANOSHEETS
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Shang-Wei Fang of Hsinchu (TW)
Jiann-Tyng Tzeng of Hsinchu (TW)
SEMICONDUCTOR DEVICE HAVING NANOSHEETS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240258311 titled 'SEMICONDUCTOR DEVICE HAVING NANOSHEETS
Simplified Explanation:
This patent application describes semiconductor devices with two transistors, each made of a different number of nanosheets, stacked vertically on different regions of the substrate.
- The first transistor consists of a nanosheet stack with n nanosheets.
- The second transistor consists of a nanosheet stack with m nanosheets.
- The nanosheet stacks are vertically offset from each other on the substrate.
Key Features and Innovation:
- Utilizes nanosheet technology in semiconductor devices.
- Allows for different numbers of nanosheets in different transistors.
- Enables vertical stacking of transistors on the substrate.
Potential Applications:
- Advanced electronics manufacturing.
- High-performance computing.
- Next-generation mobile devices.
Problems Solved:
- Enhances transistor performance.
- Increases device efficiency.
- Enables more compact device designs.
Benefits:
- Improved device speed and power efficiency.
- Enhanced overall device performance.
- Potential for smaller and more powerful electronics.
Commercial Applications:
- Semiconductor industry for advanced chip manufacturing.
- Consumer electronics for faster and more efficient devices.
- Data centers for high-performance computing applications.
Questions about Semiconductor Devices:
1. How does the vertical offset of the nanosheet stacks impact device performance? 2. What are the potential challenges in manufacturing semiconductor devices with different numbers of nanosheets in each transistor?
Original Abstract Submitted
disclosed are semiconductor devices including a substrate, a first transistor formed over a first portion of the substrate, wherein the first transistor comprises a first nanosheet stack including n nanosheets and a second transistor over a second portion of the substrate, wherein the second transistor comprises a second nanosheet stack including m nanosheets, wherein n is different from m in which the first and second nanosheet stacks are formed on first and second substrate regions that are vertically offset from one another.