Self Aligned Contact Scheme

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Self Aligned Contact Scheme - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240258168 titled 'Self Aligned Contact Scheme

The method described in the patent application involves using a second hard mask layer over a gate stack to protect the gate electrode during the etching of a self-aligned contact. This second hard mask layer is formed over a first hard mask layer, where the first hard mask layer has a lower etch selectivity than the second hard mask layer.

The innovation involves the use of a dual hard mask layer system to protect the gate electrode during the etching process.
The second hard mask layer provides better protection due to its higher etch selectivity compared to the first hard mask layer.
This method ensures precise and accurate etching of the self-aligned contact without damaging the gate electrode.
By using two hard mask layers, the process becomes more efficient and reliable, leading to improved device performance.
The innovation can be applied in the semiconductor industry for manufacturing advanced integrated circuits.

Potential Applications: - Semiconductor manufacturing - Integrated circuit fabrication - Microelectronics industry

Problems Solved: - Protecting the gate electrode during the etching process - Ensuring precise etching of self-aligned contacts - Improving device performance and reliability

Benefits: - Enhanced protection for gate electrodes - Improved etching accuracy - Increased efficiency in semiconductor manufacturing processes

Commercial Applications: Title: Advanced Semiconductor Manufacturing Process with Dual Hard Mask Layers This technology can be utilized in the production of advanced integrated circuits, leading to higher quality and more reliable electronic devices. The market implications include improved performance and efficiency in semiconductor manufacturing processes.

Questions about the technology: 1. How does the use of dual hard mask layers improve the etching process in semiconductor manufacturing? 2. What are the specific advantages of using a second hard mask layer with higher etch selectivity?

Original Abstract Submitted

a method includes using a second hard mask layer over a gate stack to protect the gate electrode during etching a self-aligned contact. the second hard mask is formed over a first hard mask layer, where the first hard mask layer has a lower etch selectivity than the second hard mask layer.