METHOD AND STRUCTURE FOR SEMICONDUCTOR INTERCONNECT

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

METHOD AND STRUCTURE FOR SEMICONDUCTOR INTERCONNECT

This abstract first appeared for US patent application 20240258096 titled 'METHOD AND STRUCTURE FOR SEMICONDUCTOR INTERCONNECT

Original Abstract Submitted

a semiconductor structure includes a substrate, a conductive feature over the substrate, a dielectric layer over the conductive feature and the substrate, and a structure disposed over and electrically connected to the conductive feature. the structure is partially surrounded by the dielectric layer and includes a first metal-containing layer and a second metal-contain layer surrounded by the first metal-containing layer. the first and the second metal-containing layers include different materials. a lower portion of the first metal-containing layer includes a transition metal or a transition metal nitride and an upper portion of the first metal-containing layer includes a transition metal fluoride or a transition metal chloride.