SEMICONDUCTOR DEVICE

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Wang-Chun Huang of Kaohsiung City (TW)

Hou-Yu Chen of Hsinchu County (TW)

Kuan-Lun Cheng of Hsinchu City (TW)

Chih-Hao Wang of Hsinchu County (TW)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240243126 titled 'SEMICONDUCTOR DEVICE

The device described in the patent application includes a channel layer, a gate structure, a first source/drain structure, a second source/drain structure, and a backside via. The gate structure surrounds the channel layer, while the first and second source/drain structures are connected to the channel layer. The backside via is connected to the backside of the first source/drain structure and consists of three portions, with the third portion tapering from the second portion to the first portion.

The device features a unique backside via design with three portions.
The backside via is connected to the backside of the first source/drain structure.
The third portion of the backside via tapers from the second portion to the first portion.
The sidewall of the third portion is more inclined than the sidewall of the second portion.

Potential Applications: - This technology could be applied in the semiconductor industry for advanced electronic devices. - It may find use in the development of high-performance transistors and integrated circuits.

Problems Solved: - Provides improved connectivity between the backside via and the source/drain structure. - Enhances the overall performance and efficiency of electronic devices.

Benefits: - Increased reliability and stability of electronic components. - Enhanced functionality and performance of semiconductor devices.

Commercial Applications: Title: Advanced Semiconductor Device with Unique Backside Via Design This technology could have commercial applications in the semiconductor industry for the development of high-performance electronic devices. It may be utilized in the production of advanced transistors and integrated circuits, catering to the growing demand for efficient and reliable semiconductor components in various electronic applications.

Questions about the technology: 1. How does the unique backside via design improve the performance of electronic devices? 2. What are the potential challenges in implementing this technology in semiconductor manufacturing processes?

Frequently Updated Research: Stay updated on the latest advancements in semiconductor technology and manufacturing processes to leverage the benefits of this innovative backside via design. Explore research articles and publications related to semiconductor device fabrication and design to enhance your understanding of this cutting-edge technology.

Original Abstract Submitted

a device includes a channel layer, a gate structure, a first source/drain structure, a second source/drain structure, and a backside via. the gate structure surrounds the channel layer. the first source/drain structure and the second source/drain structure ate connected to the channel layer. the backside via is connected to a backside of the first source/drain structure. the backside via includes a first portion, a second portion, and a third portion. the first portion is connected to the backside of the first source/drain structure. the third portion tapers from the second portion to the first portion. a sidewall of the third portion is more inclined than a sidewall of the second portion.