SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Li-Ling Su of Taichung County TW

Chia-Wei Su of Taoyuan City TW

Tsu-Chun Kuo of Hsinchu County TW

Wei-Hao Liao of New Taipei City TW

Hsin-Ping Chen of Hsinchu County TW

Yung-Hsu Wu of Taipei City TW

Ming-Han Lee of Taipei City TW

Shin-Yi Yang of New Taipei City TW

Chih Wei Lu of Hsinchu City TW

Hsi-Wen Tien of Hsinchu County TW

Meng-Pei Lu of Hsinchu City TW

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

This abstract first appeared for US patent application 20250125251 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Original Abstract Submitted

a semiconductor device includes a semiconductor substrate, a gate structure, strained layers, source/drain contact patterns, a gate contact via, and source/drain contact vias. the gate structure is disposed over the semiconductor substrate. the strained layers are disposed aside the gate structure. the source/drain contact patterns are disposed on and electrically connected to the strained layers. top surfaces of the source/drain contact patterns are coplanar with a top surface of the gate structure. the gate contact via is disposed on and electrically connected to the gate structure. the source/drain contact vias are disposed on and electrically connected to the source/drain contact patterns.