Taiwan semiconductor manufacturing co., ltd. (20250125148). METHOD FOR TWO-DIMENSIONAL MENTAL LINE PATTERNING
METHOD FOR TWO-DIMENSIONAL MENTAL LINE PATTERNING
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
METHOD FOR TWO-DIMENSIONAL MENTAL LINE PATTERNING
This abstract first appeared for US patent application 20250125148 titled 'METHOD FOR TWO-DIMENSIONAL MENTAL LINE PATTERNING
Original Abstract Submitted
a method of semiconductor fabrication includes forming a plurality of mandrel recesses in a mandrel layer over a hard mask layer, performing a first patterning process on a spacer layer that is deposited over the mandrel layer to form a first opening pattern, performing a second patterning process to etch portions of the mandrel layer to form a second opening pattern, performing a third patterning process to form a third opening pattern in the hard mask layer based on the first opening pattern and the second opening pattern, and forming, through the hard mask layer, metal lines that are in a semiconductor layer under the hard mask layer and that are arranged in a pattern which corresponds to the third opening pattern.
- Taiwan semiconductor manufacturing co., ltd.
- Chia-Chen Lee of Hsinchu TW
- Chia-Tien Wu of Hsinchu TW
- Wei-Chen Chu of Hsinchu TW
- Hsi-Wen Tien of Hsinchu TW
- Wei-Cheng Tzeng of Hsinchu TW
- Ching-Yu Huang of Hsinchu TW
- Wei-Cheng Lin of Hsinchu TW
- Ken-Hsien Hsieh of Hsinchu TW
- H01L21/033
- H01L21/311
- H01L21/768
- CPC H01L21/0337