MEMORY AND OPERATING METHOD THEREOF

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

MEMORY AND OPERATING METHOD THEREOF

This abstract first appeared for US patent application 20250124980 titled 'MEMORY AND OPERATING METHOD THEREOF

Original Abstract Submitted

a memory includes a memory device, a reading device and a feedback device. the memory device stores a plurality of bits. the reading device includes first and second reading circuits coupled to the memory device. the second reading circuit is coupled to the first reading circuit at a first node. the first and second reading circuits cooperates with each other to generate a first voltage signal at the first node based on at least one first bit of the plurality of bits. the feedback device adjusts at least one of the first reading circuit or the second reading circuit based on the first voltage signal. the first and second reading circuits generate a second voltage signal, different from the first voltage signal, corresponding to the bits, after the at least one of the first reading circuit or the second reading circuit is adjusted by the feedback device.