INTEGRATED PROCESS FLOW FOR SENSOR PACKAGE

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

INTEGRATED PROCESS FLOW FOR SENSOR PACKAGE

This abstract first appeared for US patent application 20250123303 titled 'INTEGRATED PROCESS FLOW FOR SENSOR PACKAGE

Original Abstract Submitted

in some embodiments, the present disclosure relates to an integrated device, including: a substrate; a semiconductor layer on the substrate and including a first structure being one of a sound port, a sealed cavity, or a proof mass, and a second structure being one of the sound port, the sealed cavity, or the proof mass, where the second structure is a different one of the sound port, the sealed cavity, or the proof mass than the first structure; a piezoelectric layer on the semiconductor layer overlying the first structure and the second structure; and an air gap extending into the semiconductor layer from an upper surface of the piezoelectric layer, wherein the first structure and portions of the piezoelectric layer overlying the first structure are spaced from the second structure and portions of the piezoelectric layer overlying the second structure by the air gap.