Taiwan semiconductor manufacturing co., ltd. (20250120323). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
HARRY-HAKLAY Chuang of Hsinchu TW
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
This abstract first appeared for US patent application 20250120323 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Original Abstract Submitted
a semiconductor device includes a plurality of interlayer dielectric layers, a memory cell, and a first capping layer. the memory cell is embedded in the interlayer dielectric layers, the first capping layer covers the memory cell and surrounds the sidewalls of the memory cell, the first capping layer includes a hydrogen absorbing material, and the hydrogen absorbing material prevents hydrogen gas from entering the memory cell.