BACKSIDE DIELECTRIC PLUG

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Chen-Ming Lee of Taoyuan County TW

Shih-Chieh Wu of Hsinchu TW

Po-Yu Huang of Hsinchu TW

I-Wen Wu of Hsinchu City TW

Fu-Kai Yang of Hsinchu City TW

Mei-Yun Wang of Hsin-Chu TW

BACKSIDE DIELECTRIC PLUG

This abstract first appeared for US patent application 20250120122 titled 'BACKSIDE DIELECTRIC PLUG

Original Abstract Submitted

one aspect of the present disclosure pertains to a semiconductor device. the semiconductor device includes a semiconductor substrate and a transistor formed over the semiconductor substrate. the transistor includes a first source/drain (s/d) feature, a second s/d feature, a channel region interposed between the first and second s/d features, and a gate stack engaging the channel region. the semiconductor device includes a first s/d contact landing on a top surface of the first s/d feature, a second s/d contact landing on a top surface of the second s/d feature, and a dielectric plug penetrating through the semiconductor substrate and landing on a bottom surface of the first s/d feature. the dielectric plug spans a width equal to or smaller than a width of the first s/d feature.