Taiwan semiconductor manufacturing co., ltd. (20250113538). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
This abstract first appeared for US patent application 20250113538 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Original Abstract Submitted
a semiconductor device includes a substrate, a first active structure, a second active structure, an epitaxy and a conductive via. the first active structure is formed on the substrate and including a plurality of first sheets and a plurality of first spacers. the second active structure is disposed formed on the substrate and adjacent to the first active structure, wherein the second active structure includes a plurality of second sheets and a plurality of second spacers, the second sheets and the second spacers are stacked to each other, and there is trench between the first active structure and the second active structure. the epitaxy is formed within the trench. the conductive via is connected with the epitaxy. the semiconductor device further has a planarized surface including the first active structure, the second active structure and the conductive via, and the planarized surface has a flatness less than 10 nm.