Taiwan semiconductor manufacturing co., ltd. (20250113517). EPITAXIAL REGIONS IN SEMICONDUCTOR DEVICES
EPITAXIAL REGIONS IN SEMICONDUCTOR DEVICES
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Shao-An Wang of Hsinchu County TW
Ding-Kang Shih of New Taipei City TW
Chia-Ling Pai of Taichung City TW
EPITAXIAL REGIONS IN SEMICONDUCTOR DEVICES
This abstract first appeared for US patent application 20250113517 titled 'EPITAXIAL REGIONS IN SEMICONDUCTOR DEVICES
Original Abstract Submitted
a method of forming source/drain regions of semiconductor devices is disclosed. the method includes forming a fin structure on a substrate, forming a polysilicon structure on the fin structure, removing a portion of the fin structure adjacent to the polysilicon structure to form an opening, and forming a s/d region in the opening. the forming the s/d region includes exposing the fin structure in the opening to a first flow rate of a precursor gas during a first phase of a gas flow cycle, a second flow rate of the precursor gas during a second phase of the gas flow cycle. the exposing the fin structure in the opening to the precursor gas, the etching gas, and the plasma is performed in an in-situ process.