NANOSTRUCTURE AND MANUFACTURING METHOD THEREOF

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

NANOSTRUCTURE AND MANUFACTURING METHOD THEREOF

This abstract first appeared for US patent application 20250112049 titled 'NANOSTRUCTURE AND MANUFACTURING METHOD THEREOF

Original Abstract Submitted

implementations described herein provide a method of forming a semiconductor device. the method includes forming a nanostructure having a first set of layers of a first material and a second set of layers, alternating with the first set of layers, having a second material. the method further includes depositing a hard mask on a top layer of the first set of layers, the hard mask including a first hard mask layer on the top layer of the first set of layers and a second hard mask layer on the first hard mask layer. the method also includes depositing elements of a cladding structure on sidewalls of the nanostructure and the hard mask. the method further includes removing a top portion of the cladding structure. the method further includes removing the second hard mask layer after removing the top portion of the cladding structure.