Taiwan semiconductor manufacturing co., ltd. (20250107196). Source/Drain Contact Structure

Source/Drain Contact Structure

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Ting Fang of Kaohsiung City TW

Chia-Hsien Yao of Hsinchu City TW

Jui-Ping Lin of Hsinchu TW

Chen-Ming Lee of Taoyuan County TW

Chung-Hao Cai of Hsinchu TW

Fu-Kai Yang of Hsinchu City TW

Mei-Yun Wang of Hsin-Chu TW

Source/Drain Contact Structure

This abstract first appeared for US patent application 20250107196 titled 'Source/Drain Contact Structure

Original Abstract Submitted

a method according to the present disclosure includes receiving a workpiece that includes a gate structure, a first gate spacer feature, a second gate spacer feature, a gate-top dielectric feature over the gate structure, the first gate spacer feature and the second gate spacer feature, a first source/drain feature over a first source/drain region, a second source/drain feature over a second source/drain region, a first dielectric layer over the first source/drain feature, and a second dielectric layer over the second source/drain feature. the method further includes replacing a top portion of the first dielectric layer with a first hard mask layer, forming a second hard mask layer over the first hard mask layer while the second dielectric layer is exposed, etching the second dielectric layer to form a source/drain contact opening and to expose the second source/drain feature, and forming a source/drain contact over the second source/drain feature.