Taiwan semiconductor manufacturing co., ltd. (20250105055). ETCH STOP LAYERS
ETCH STOP LAYERS
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Chung-Ren Sun of Kaohsiung City TW
Kai-Shiung Hsu of Hsinchu City TW
Shih-Chi Lin of Hsinchu City TW
Huai-Tei Yang of Hsinchu City TW
ETCH STOP LAYERS
This abstract first appeared for US patent application 20250105055 titled 'ETCH STOP LAYERS
Original Abstract Submitted
contact structures and methods of forming the same are provided. a method according to the present disclosure includes receiving a workpiece including a conductive feature embedded in a first dielectric layer, treating the workpiece with a nitrogen-containing plasma, after the treating, depositing a first etch stop layer (esl) over the workpiece, depositing a second esl over the first esl, depositing a second dielectric layer over the second esl, forming an opening through the second dielectric layer, the second esl and the first esl to expose the conductive feature, and forming a contact via in the opening. the first esl includes aluminum nitride or silicon carbonitride and the second esl includes aluminum oxide or silicon oxycarbide.