Taiwan semiconductor manufacturing co., ltd. (20250102916). Photoresist and Method
Photoresist and Method
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Photoresist and Method
This abstract first appeared for US patent application 20250102916 titled 'Photoresist and Method
Original Abstract Submitted
multi-layer photoresists, methods of forming the same, and methods of patterning a target layer using the same are disclosed. in an embodiment, a method includes depositing a reflective film stack over a target layer, the reflective film stack including alternating layers of a first material and a second material, the first material having a higher refractive index than the second material; depositing a photosensitive layer over the reflective film stack; patterning the photosensitive layer to form a first opening exposing the reflective film stack, patterning the photosensitive layer including exposing the photosensitive layer to a patterned energy source, the reflective film stack reflecting at least a portion of the patterned energy source to a backside of the photosensitive layer; patterning the reflective film stack through the first opening to form a second opening exposing the target layer; and patterning the target layer through the second opening.