Taiwan semiconductor manufacturing co., ltd. (20250102460). BIOFET WITH INCREASED SENSING AREA
BIOFET WITH INCREASED SENSING AREA
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Chun-Wen Cheng of Zhubei City TW
Fei-Lung Lai of New Taipei City TW
BIOFET WITH INCREASED SENSING AREA
This abstract first appeared for US patent application 20250102460 titled 'BIOFET WITH INCREASED SENSING AREA
Original Abstract Submitted
the present disclosure provides a bio-field effect transistor (biofet) and a method of fabricating a biofet device. the method includes forming a biofet using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (cmos) process. the biofet device includes a substrate, a transistor structure, an isolation layer, an interface layer in an opening of the isolation layer, and a metal crown structure over the interface layer. the interface layer and the metal crown structure are disposed on opposite side of the transistor from a gate structure.