Taiwan semiconductor manufacturing co., ltd. (20250098346). IMAGE SENSOR STRUCTURE
IMAGE SENSOR STRUCTURE
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Kuo-Cheng Lee of Tainan City TW
Cheng-Hao Chiu of Changhua County TW
Hsun-Ying Huang of Tainan City TW
Ming-Hong Su of Tainan City TW
IMAGE SENSOR STRUCTURE
This abstract first appeared for US patent application 20250098346 titled 'IMAGE SENSOR STRUCTURE
Original Abstract Submitted
an image sensor structure and methods of forming the same are provided. an image sensor structure according to the present disclosure includes a semiconductor substrate including a photodiode, a transfer gate transistor disposed over the semiconductor substrate and having a first channel area, a first dielectric layer disposed over the semiconductor substrate, a semiconductor layer disposed over the first dielectric layer, a source follower transistor disposed over the semiconductor layer and having a second channel area, a row select transistor disposed over the semiconductor layer and having a third channel area, and a reset transistor disposed over the semiconductor layer and having a fourth channel area. the second channel area is greater than the first channel area, the third channel area or the fourth channel area.