INCREASE THE VOLUME OF EPITAXY REGIONS

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

INCREASE THE VOLUME OF EPITAXY REGIONS

This abstract first appeared for US patent application 20250098282 titled 'INCREASE THE VOLUME OF EPITAXY REGIONS

Original Abstract Submitted

a method includes forming a gate stack on a plurality of semiconductor fins. the plurality of semiconductor fins includes a plurality of inner fins, and a first outer fin and a second outer fin on opposite sides of the plurality of inner fins. epitaxy regions are grown based on the plurality of semiconductor fins, and a first height of the epitaxy regions measured along an outer sidewall of the first outer fin is smaller than a second height of the epitaxy regions measured along an inner sidewall of the first outer fin.