Taiwan semiconductor manufacturing co., ltd. (20250098280). SEMICONDUCTOR METHOD AND DEVICE
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SEMICONDUCTOR METHOD AND DEVICE
Organization Name
taiwan semiconductor manufacturing co., ltd.
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SEMICONDUCTOR METHOD AND DEVICE
This abstract first appeared for US patent application 20250098280 titled 'SEMICONDUCTOR METHOD AND DEVICE
Original Abstract Submitted
a method includes forming a fin extending from a substrate; depositing a liner over a top surface and sidewalls of the fin, where the minimum thickness of the liner is dependent on selected according to a first germanium concentration of the fin; forming a shallow trench isolation (sti) region adjacent the fin; removing a first portion of the liner on sidewalls of the fin, the first portion of the liner being above a topmost surface of the sti region; and forming a gate stack on sidewalls and a top surface of the fin, where the gate stack is in physical contact with the liner.