SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Hsin-Che Chiang of Taipei City TW

Ju-Yuan Tzeng of New Taipei City TW

Chun-Sheng Liang of Changhua County TW

Chih-Yang Yeh of Hsinchu County TW

Shu-Hui Wang of Hsinchu City TW

Jeng-Ya David Yeh of New Taipei City TW

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

This abstract first appeared for US patent application 20250098270 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Original Abstract Submitted

a method includes forming a semiconductor fin over a substrate; forming a gate structure over the semiconductor fin, the gate structure comprising: a first metallic layer; a second metallic layer over the first metallic layer, wherein the first metallic layer is a metal compound of a first element and a second element and the second metallic layer is a single-element metal of the second element; and an oxide layer between the first metallic layer and the second metallic layer.