MEMORY DEVICE

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Xiu-Li Yang of Shanghai City CN

He-Zhou Wan of Shanghai City CN

Yan-Bo Song of Shanghai City CN

MEMORY DEVICE

This abstract first appeared for US patent application 20250098139 titled 'MEMORY DEVICE

Original Abstract Submitted

a memory device includes a first memory array, a first isolation cell abutting a first side of the first memory array, a first edge cell array abutting a second side, opposite to the first side, of the first memory array, a second memory array arranged at a first side, opposite to the first memory array, of the first isolation cell, a second edge cell array, and multiple first word lines passing through the first edge cell array, the first memory array and being terminated at the first isolation cell. a first width of the first isolation cell is different from a second width of the first edge cell array. the second memory array is sandwiched between the second edge cell array and the first isolation cell.