PHOTODETECTORS AND METHODS OF FORMATION

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Hau-Yan Lu of Hsinchu City (TW)

Chun-Yen Peng of Chiayi City (TW)

YingKit Felix Tsui of Cupertino CA (US)

PHOTODETECTORS AND METHODS OF FORMATION

This abstract first appeared for US patent application 20250089397 titled 'PHOTODETECTORS AND METHODS OF FORMATION

Original Abstract Submitted

a photodetector may include an absorption region that is formed to have an increasing depth (or thickness) in a direction that is approximately parallel to the direction of incident light that is to be projected onto the absorption region. the increasing depth of the absorption region in the direction that is approximately parallel with the direction of incident light enables the incident light to be more uniformly distributed along the length of the absorption region in the direction that is approximately parallel with the direction of incident light. this reduces the likelihood that a particular area of the absorption region reaches optical saturation, which may enable the photodetector to operate a sustained high photodetector sensitivity and/or a sustained high light detection performance, among other examples.