Taiwan semiconductor manufacturing co., ltd. (20250089340). SEMICONDUCTOR DEVICE AND METHOD
SEMICONDUCTOR DEVICE AND METHOD
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Jet-Rung Chang of Hsinchu (TW)
SEMICONDUCTOR DEVICE AND METHOD
This abstract first appeared for US patent application 20250089340 titled 'SEMICONDUCTOR DEVICE AND METHOD
Original Abstract Submitted
a semiconductor device and the method of forming the same are provided. the semiconductor device may comprise a first plurality of nanostructures, a second plurality of nanostructures over a substrate, a first gate stack extending between the nanostructures of the first plurality of nanostructures, a second gate stack extending between the nanostructures of the second plurality of nanostructures, a first source/drain region in contact with a first nanostructure of the first plurality of nanostructures, a second source/drain region in contact with a first nanostructure of the second plurality of nanostructures, wherein the second source/drain region may be separated from the first source/drain region, a silicide layer between the first source/drain region and the second source/drain region, and an isolation layer between the silicide layer and the substrate.