SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Zhi-Qiang Wu of Hsinchu County (TW)

Kuo-An Liu of Hsinchu City (TW)

Chan-Lon Yang of Taipei City (TW)

Bharath Kumar Pulicherla of Hsinchu City (TW)

Li-Te Lin of Hsinchu City (TW)

Chung-Cheng Wu of Hsinchu County (TW)

Gwan-Sin Chang of Hsinchu City (TW)

Pinyen Lin of Rochester NY (US)

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

This abstract first appeared for US patent application 20250089332 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Original Abstract Submitted

a semiconductor device includes a substrate having a semiconductor fin. a gate structure is over the semiconductor fin, in which the gate structure has a tapered profile and comprises a gate dielectric. a work function metal layer is over the gate dielectric, and a filling metal is over the work function metal layer. a gate spacer is along a sidewall of the gate structure, in which the work function metal layer is in contact with the gate dielectric and a top portion of the gate spacer. an epitaxy structure is over the semiconductor fin.