Taiwan semiconductor manufacturing co., ltd. (20250089325). SEMICONDUCTOR DEVICE AND METHOD
SEMICONDUCTOR DEVICE AND METHOD
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Yao-Wen Hsu of New Taipei (TW)
Yun-Ting Chiang of Hsinchu (TW)
Chun-Cheng Chou of Taichung (TW)
SEMICONDUCTOR DEVICE AND METHOD
This abstract first appeared for US patent application 20250089325 titled 'SEMICONDUCTOR DEVICE AND METHOD
Original Abstract Submitted
a method includes forming a multi-layer stack over a semiconductor substrate, the multi-layer stack comprising a plurality of sacrificial layers that alternate with a plurality of channel layers, forming a dummy gate stack over a top surface and sidewalls of the multi-layer stack, forming first spacers on sidewalls of the dummy gate stack, growing an epitaxial source/drain region that extends through the plurality of sacrificial layers and the plurality of channel layers, forming a metal-semiconductor alloy region on first portions of the epitaxial source/drain region, forming a coating layer on the metal-semiconductor alloy region, wherein during the forming of the metal-semiconductor alloy region and the coating layer, a residual layer is formed on sidewalls of the first spacers, and performing a wet clean process to selectively etch the residual layer from the sidewalls of the first spacers.