SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Mauricio Manfrini of Hsinchu County (TW)

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

This abstract first appeared for US patent application 20250089304 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Original Abstract Submitted

a semiconductor device includes a transistor and a ferroelectric tunnel junction. the ferroelectric tunnel junction is connected to a drain contact of the transistor. the ferroelectric tunnel junction includes a first electrode, a second electrode, a crystalline oxide layer, and a ferroelectric layer. the second electrode is disposed over the first electrode. the crystalline oxide layer and the ferroelectric layer are disposed in direct contact with each other in between the first electrode and the second electrode. the crystalline oxide layer comprises a crystalline oxide material. the ferroelectric layer comprises a ferroelectric material.