METAL-INSULATOR-METAL (MIM) CAPACITORS WITH IMPROVED RELIABILITY

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Chia-Yueh Chou of Taoyuan City (TW)

Hsiang-Ku Shen of Hsinchu City (TW)

Chen-Chiu Huang of Taichung City (TW)

Dian-Hau Chen of Hsinchu (TW)

Cheng-Hao Hou of Hsinchu City (TW)

Kun-Yu Lee of Tainan City (TW)

Ming-Ho Lin of Taipei City (TW)

Alvin Universe Tang of Hsinchu City (TW)

Chun-Hsiu Chiang of Taipei City (TW)

METAL-INSULATOR-METAL (MIM) CAPACITORS WITH IMPROVED RELIABILITY

This abstract first appeared for US patent application 20250089277 titled 'METAL-INSULATOR-METAL (MIM) CAPACITORS WITH IMPROVED RELIABILITY

Original Abstract Submitted

semiconductor structures and methods are provided. an exemplary method includes depositing forming a first metal-insulator-metal (mim) capacitor over a substrate and forming a second mim capacitor over the first mim capacitor. the forming of the first mim capacitor includes forming a first conductor plate over a substrate, the first conductor plate comprising a first metal element, conformally depositing a first dielectric layer on the first conductor plate, the first dielectric layer comprising the first metal element, forming a first high-k dielectric layer on the first dielectric layer, conformally depositing a second dielectric layer on the first high-k dielectric layer, the second dielectric layer comprising a second metal element, and forming a second conductor plate over the second dielectric layer, the second conductor plate comprises the second metal element.