METHODS FOR FABRICATING SEMICONDCUTOR STRUCTURES

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

METHODS FOR FABRICATING SEMICONDCUTOR STRUCTURES

This abstract first appeared for US patent application 20250087496 titled 'METHODS FOR FABRICATING SEMICONDCUTOR STRUCTURES

Original Abstract Submitted

embodiments of the present disclosure relates to method of forming trench and via features using dielectric and metal mask layers. particularly, embodiments of present disclosure provide a hard mask stack including a first dielectric mask layer, and second dielectric mask layer and a metal mask layer, wherein the first dielectric mask layer and second dielectric mask layer have a high etch selectivity.