SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

This abstract first appeared for US patent application 20250087285 titled 'SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

Original Abstract Submitted

a method includes forming a first gate structure across a first active region on a substrate within a memory region, wherein the first gate structure is of a first transistor being of a first conductivity type; forming a second gate structure across a second active region on the substrate within a peripheral region, wherein the second gate structure is of a second transistor being of a second conductivity type, the second conductivity type is opposite to the first conductivity type; forming a first gate contact over the first gate structure, the first gate contact overlapping with the first active region; forming a second gate contact over the second gate structure, the second gate contact non-overlapping with the second active region.