METALENS FOR NEAR INFRARED PHOTODETECTOR

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Yi-Hsuan Wang of Hsinchu City (TW)

Cheng Yu Huang of Hsinchu (TW)

Chun-Hao Chuang of Hsinchu City (TW)

Keng-Yu Chou of Kaohsiung City (TW)

Wen-Hau Wu of New Taipei City (TW)

Wei-Chieh Chiang of Yuanlin Township (TW)

Chih-Kung Chang of Zhudong Township (TW)

METALENS FOR NEAR INFRARED PHOTODETECTOR

This abstract first appeared for US patent application 20240429257 titled 'METALENS FOR NEAR INFRARED PHOTODETECTOR

Original Abstract Submitted

an image sensing device includes a germanium sensor within a semiconductor body and a metalens formed in the back side of the semiconductor body. the metalens is structured to focus infrared light on the germanium sensor and may have a lower profile than an equivalent microlens. optionally, the metalens is combined with a microlens to achieve a desired focal length. the metalens, or the metalens in combination with a microlens, overcomes a manufacturing process limitation on the focal length of the microlens, which in turn eliminates the need for, or reduces the thickness of, a spacer between the microlens and the germanium sensor. eliminating the spacer or reducing its thickness improves the angular response of the image sensing device.