ONE-TIME-PROGRAMMABLE MEMORY

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

ONE-TIME-PROGRAMMABLE MEMORY - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240312543 titled 'ONE-TIME-PROGRAMMABLE MEMORY

Simplified Explanation: The patent application discloses various one-time-programmable (OTP) memory cells, including an OTP memory cell with an additional dopant region extending under the gate of a transistor, and an OTP memory cell with three transistors - an anti-fuse transistor and two select transistors.

An OTP memory cell with an additional dopant region provides an extra current path for a read current.
Another OTP memory cell includes three transistors - an anti-fuse transistor and two select transistors, which can be configured as a cascaded select transistor or two separate select transistors.

Potential Applications: - Semiconductor industry for memory applications - Embedded systems requiring one-time programmable memory - Secure data storage applications

Problems Solved: - Providing reliable one-time programmable memory cells - Enhancing read current paths in OTP memory cells - Improving select transistor configurations for OTP memory cells

Benefits: - Increased reliability in one-time programmable memory cells - Enhanced read current paths for improved performance - Versatile configurations for select transistors in OTP memory cells

Commercial Applications: Title: Innovative One-Time Programmable Memory Cells for Enhanced Performance This technology can be utilized in various semiconductor devices, embedded systems, and secure data storage applications, enhancing their performance and reliability in the market.

Questions about One-Time Programmable Memory Cells: 1. How do the additional dopant regions in OTP memory cells improve read current paths? 2. What are the advantages of using three transistors in an OTP memory cell configuration?

Frequently Updated Research: Ongoing research in the semiconductor industry focuses on developing more efficient and reliable one-time programmable memory cells for various applications. Stay updated on the latest advancements in this field for potential future innovations.

Original Abstract Submitted

various one-time-programmable (otp) memory cells are disclosed. an otp memory cell includes an additional dopant region that extends at least partially under the gate of a transistor, such as an anti-fuse transistor. the additional dopant region provides an additional current path for a read current. alternatively, an otp memory cell includes three transistors; an anti-fuse transistor and two select transistors. the two select transistors can be configured as a cascaded select transistor or as two separate select transistors.