CHEMICAL MECHANICAL POLISHING METHOD

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

CHEMICAL MECHANICAL POLISHING METHOD - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240308021 titled 'CHEMICAL MECHANICAL POLISHING METHOD

The chemical mechanical polishing method described in the abstract involves polishing a wafer by dispensing two slurries with different abrasive particles sizes.

The method includes holding a wafer in a carrier over a polishing pad.
A first slurry with larger abrasive particles is dispensed into the carrier.
At least one of the carrier and the polishing pad is rotated during the polishing process.
The dispensing of the first slurry is halted, and a second slurry with smaller abrasive particles is dispensed into the carrier.
The second slurry helps achieve a finer polishing finish on the wafer surface.

Potential Applications: - Semiconductor manufacturing - Microelectronics industry - Optical device fabrication

Problems Solved: - Achieving precise and uniform polishing of wafers - Enhancing the quality and performance of semiconductor devices

Benefits: - Improved surface finish on wafers - Enhanced device performance and reliability - Increased productivity in manufacturing processes

Commercial Applications: Title: Advanced Chemical Mechanical Polishing Method for Semiconductor Manufacturing This technology can be utilized in the production of various semiconductor devices, leading to higher quality products and increased efficiency in manufacturing processes. The method can be adopted by semiconductor companies looking to enhance their fabrication techniques and improve the performance of their devices.

Questions about Chemical Mechanical Polishing Method: 1. How does the size of abrasive particles affect the polishing process?

  - The size of abrasive particles influences the surface finish and polishing efficiency, with smaller particles typically resulting in a finer finish.

2. What are the key advantages of using a two-slurry polishing method?

  - Using two slurries with different abrasive particles sizes allows for more precise control over the polishing process, leading to improved surface quality and device performance.

Original Abstract Submitted

a chemical mechanical polishing method includes holding a wafer in a carrier over a polishing pad, dispensing a first slurry comprising a plurality of first abrasive particles into the carrier, rotating at least one of the carrier and the polishing pad, halting the dispensing of the first slurry, and dispensing a second slurry into the carrier after halting the dispensing of the first slurry, wherein the second slurry comprises a plurality of second abrasive particles smaller than the first abrasive particles.