Taiwan semiconductor manufacturing co., ltd. (20240224813). MRAM CELL AND MRAM simplified abstract
MRAM CELL AND MRAM
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Perng-Fei Yuh of Walnut Creek CA (US)
MRAM CELL AND MRAM - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240224813 titled 'MRAM CELL AND MRAM
The abstract describes a patent application for magnetic random access memory (MRAM) cells, which consist of stacked magnetic tunnel junction (MTJ) devices connected in series between a bit line and a source line. The stacked MTJ devices vary in size and each include a free layer, a pinned layer, and a barrier layer between them. The free layers of adjacent stacked MTJ devices are in direct contact with each other.
- MRAM cells with stacked MTJ devices of different sizes
- MTJ devices connected in series between a bit line and a source line
- Free layer, pinned layer, and barrier layer in each stacked MTJ device
- Direct contact between free layers of adjacent stacked MTJ devices
Potential Applications: - Memory storage in electronic devices - High-speed data processing in computers - Non-volatile memory applications
Problems Solved: - Improved data storage and access speed - Enhanced reliability and durability of memory cells - Increased energy efficiency in electronic devices
Benefits: - Faster data access and processing - Lower power consumption - Longer lifespan of memory cells
Commercial Applications: Title: "Enhanced MRAM Cells for High-Speed Data Processing" This technology can be used in: - Consumer electronics - Data centers - Automotive systems
Questions about MRAM technology: 1. How does the size difference in stacked MTJ devices impact the performance of MRAM cells? 2. What are the advantages of using MRAM cells over traditional memory technologies?
Frequently Updated Research: Ongoing studies focus on optimizing the design of MRAM cells for even faster data processing speeds and increased storage capacity.
Original Abstract Submitted
magnetic random access memory (mram) cells are provided. mram cell includes a plurality of stacked magnetic tunnel junction (mtj) devices coupled in serial and coupled between a bit line and a source line. the stacked mtj devices have different sizes. each of the stacked mtj devices includes a free layer, a pinned layer and a barrier layer between the free layer and the pinned layer. the free layers of two adjacent stacked mtj devices are in direct contact with each other.