Taiwan semiconductor manufacturing co., ltd. (20240224512). ONE-TIME PROGRAMMABLE MEMORY DEVICE simplified abstract

ONE-TIME PROGRAMMABLE MEMORY DEVICE

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Meng-Sheng Chang of Hsinchu County (TW)

Chia-En Huang of Hsinchu County (TW)

ONE-TIME PROGRAMMABLE MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240224512 titled 'ONE-TIME PROGRAMMABLE MEMORY DEVICE

The abstract describes an OTP memory cell that includes an antifuse transistor and a selection transistor for storing data.

• The antifuse transistor is connected to a first word line with a first signal, allowing it to switch between two states based on the signal.
• A selection transistor is connected between the antifuse transistor and a bit line, controlled by a second word line with a second signal to provide access to the antifuse transistor.
• The antifuse transistor has a vacancy terminal as its first terminal, and its second terminal is connected to the selection transistor.

Potential Applications: - Secure data storage in electronic devices - Non-volatile memory applications - Embedded systems requiring one-time programmable memory

Problems Solved: - Providing a reliable and secure method for storing data in memory cells - Ensuring data integrity and preventing unauthorized access - Reducing power consumption in memory storage devices

Benefits: - High level of security for stored data - Low power consumption for improved efficiency - Reliable and durable memory storage solution

Commercial Applications: Title: Secure One-Time Programmable Memory for Embedded Systems This technology can be used in various industries such as IoT devices, medical devices, and automotive systems for secure data storage needs.

Prior Art: Readers can explore prior research on antifuse transistors, OTP memory cells, and non-volatile memory technologies to understand the evolution of this innovation.

Frequently Updated Research: Stay updated on advancements in antifuse technology, memory cell design, and data security measures for embedded systems.

Questions about OTP Memory Cells: 1. How does the antifuse transistor in an OTP memory cell differ from traditional memory storage methods? 2. What are the key advantages of using OTP memory cells in embedded systems for data security and reliability?

Original Abstract Submitted

an otp memory cell is provided. the otp memory cell includes: an antifuse transistor, wherein a gate terminal of the antifuse transistor is connected to a first word line having a first signal, and the antifuse transistor is selectable between a first state and a second state in response to the first signal; and a selection transistor connected between the antifuse transistor and a bit line, wherein a gate terminal of the selection transistor is connected to a second word line having a second signal, and the selection transistor is configured to provide access to the antifuse transistor in response to the second signal. a first terminal of the antifuse transistor is a vacancy terminal, and a second terminal of the antifuse transistor is connected to the selection transistor.