Patent Applications by Taiwan Semiconductor Manufacturing Company Ltd on 11th September 2025

Taiwan Semiconductor Manufacturing Company Ltd: 51 patent applications

Taiwan Semiconductor Manufacturing Company Ltd has applied for patents in the areas of H10D84/038 (Technology classification, 10), H10D30/6735 (Technology classification, 8), H10D30/6757 (Technology classification, 7), H10D62/121 (Technology classification, 6), G06F30/392 (Floor-planning or layout, e.g. partitioning or placement, 5)

Patent Applications by Taiwan Semiconductor Manufacturing Company Ltd

20250284213. SYSTEM OF REMOVING PARTICLES FROM PELLICLE

Abstract: A method of removing a particle from a pellicle includes moving a nozzle over a surface of a membrane of the pellicle to a location of the particle. A droplet of a liquid material is dispensed from the nozzle to cover the particle on the surface of the membrane. A contact of the droplet with the noz...

20250284305. VOLTAGE REFERENCE CIRCUIT USING FIELD-EFFECT TRANSISTORS

Abstract: An integrated circuit is provided, which includes a first temperature-sensitive device and a second temperature-sensitive device. The first temperature-sensitive device is configured to generate a reference voltage at an output terminal of the integrated circuit. The second temperature-sensitive dev...

20250284873. Post-Routing Congestion Optimization

Abstract: A method includes: identifying a first design rule check (DRC) violation in a cluster box on an integrated circuit layout; locating a first target cell at a first original location in the cluster box, the first target cell being connected to the first DRC violation; detecting a first plurality of ca...

20250284874. SEMICONDUCTOR DEVICE HAVING POWER RAIL WITH NON-LINEAR EDGE

Abstract: A semiconductor device includes a plurality of active regions extending in a first direction. The semiconductor device further includes a power rail extending in the first direction. The power rail includes a first power rail portion, wherein the first power rail portion has a first inner edge, and ...

20250285662. LOW POWER WAKE UP FOR MEMORY

Abstract: Disclosed herein are related to reducing power consumption of a memory device when transitioning from a sleep state to an operational state. In one aspect, the memory device includes a memory cell to store data. In one aspect, the memory device includes an output driver configured to: generate an ou...

20250285663. MEMORY CIRCUITS WITH REGISTER CIRCUTIS AND METHODS FOR OPERATING THE SAME

Abstract: A memory circuit includes a memory array comprising a plurality of first memory cells and a plurality of second memory cells, each of the plurality of first memory cells configured to store a data bit and each of the plurality of second memory cells configured to store a repair bit; a plurality of r...

20250285677. RESISTIVE RANDOM ACCESS MEMORY DEVICE

Abstract: A method includes causing a first information bit to be written into a first bit cell in a first plurality of bit cells as an original logic state of the first information bit. The method also includes causing a second information bit to be written into a second bit cell in a second plurality of bit...

20250285694. MEMORY DEVICE AND OPERATING METHOD OF THE SAME

Abstract: A memory device is provided, including a first bit cell including a first memory cell coupled to a first word line and a second bit cell including a second memory cell coupled to a second word line. The first and second memory cells are coupled to a first control line and further coupled to a first ...

20250285701. SYSTEM, MEMORY DEVICE AND METHOD

Abstract: A memory device is provided, comprising an encoder circuit, a memory array and an accumulator circuit. The encoder circuit converts a first bit of each of weights into a sign bit to generate encoded weights according to flag data. The memory array comprises memory cells. The memory cells arranged in...

20250285864. METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

Abstract: Method of manufacturing a semiconductor device, includes forming a protective layer over substrate having a plurality of protrusions and recesses. The protective layer includes polymer composition including polymer having repeating units of one or more of:...

20250285869. SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

Abstract: Embodiments of the present disclosure provide a method for forming a semiconductor device structure. The method includes forming a fin structure over a substrate, forming an insulating material adjacent the fin structure, depositing a gate dielectric layer over the fin structure, depositing a gate e...

20250285870. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Abstract: A fabrication method includes: forming a gate structure between an interlayer dielectric (ILD) layer on a substrate; forming a metal cap layer over the gate structure; treating a substrate surface in an inductively coupled plasma (ICP) chamber, the treating comprising oxidation of a surface of the m...

20250285905. SEMICONDUCTOR PACKAGE AND MANUFACTURING METHOD THEREOF

Abstract: A semiconductor package includes a semiconductor device, an encapsulating material encapsulating the semiconductor device, and a redistribution structure disposed over the encapsulating material and the semiconductor device. The semiconductor device includes conductive bumps and a dielectric film en...

20250285915. SEMICONDUCTOR INTERCONNECTION STRUCTURES AND METHODS OF FORMING THE SAME

Abstract: An interconnection structure includes a first dielectric layer, a first conductive feature, a first liner layer, a second conductive feature, a second liner layer, and an air gap. The first conductive feature is disposed in the first dielectric layer. The first liner layer is disposed between the fi...

20250285930. SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

Abstract: A semiconductor structure includes a first semiconductor die, a second semiconductor die underlying and bonded to the first semiconductor die, and an insulating encapsulant disposed over the second semiconductor die. The first semiconductor die includes a semiconductor substrate and an interconnect ...