Patent Applications by Taiwan Semiconductor Manufacturing Co Ltd on 11th September 2025

Taiwan Semiconductor Manufacturing Co Ltd: 28 patent applications

Taiwan Semiconductor Manufacturing Co Ltd has applied for patents in the areas of H10D30/6735 (Technology classification, 9), H10D84/038 (Technology classification, 8), H10D64/017 (Technology classification, 7), H10D30/6757 (Technology classification, 6), H10D30/024 (Technology classification, 6)

Patent Applications by Taiwan Semiconductor Manufacturing Co Ltd

20250283831. SYSTEM AND METHOD FOR DETECTING CONTAMINATION OF THIN-FILMS

Abstract: A thin-film deposition system deposits a thin-film on a wafer. A radiation source irradiates the wafer with excitation light. An emissions sensor detects an emission spectrum from the wafer responsive to the excitation light. A machine learning based analysis model analyzes the spectrum and detects ...

20250284214. LITHOGRAPHY SYSTEM AND METHODS

Abstract: A method includes: depositing a mask layer over a substrate; protecting a mask of a mask assembly by a pellicle attached to a pellicle assembly, the pellicle and the pellicle assembly being laterally offset from the mask assembly by a distance; directing first radiation toward the mask with the pell...

20250285866. METHOD FOR FORMING AND USING MASK

Abstract: A method of forming a semiconductor device includes forming a photoresist layer over a mask layer, patterning the photoresist layer, and forming an oxide layer on exposed surfaces of the patterned photoresist layer. The mask layer is patterned using the patterned photoresist layer as a mask. A targe...

20250285868. SEMICONDUCTOR DEVICE HAVING WORK FUNCTION METAL STACK

Abstract: A device includes gate spacers over a substrate, and a gate structure between the gate spacers. The gate structure includes an interfacial layer, a high-k dielectric layer over the interfacial layer, a tungsten-containing layer over the high-k dielectric layer, and a first metal nitride layer having...

20250285877. FEATURE PATTERNING USING PITCH RELAXATION AND DIRECTIONAL END-PUSHING WITH ION BOMBARDMENT

Abstract: A method for forming a semiconductor structure includes forming a pattern having first and second line features extending in a first direction on a substrate. After depositing a photoresist layer on the substrate to cover the pattern, the photoresist layer is patterned to form a cut pattern includin...

20250285897. SEMICONDUCTOR DIE CARRIER STRUCTURE

Abstract: An apparatus having a first portion including a first front wall, a first rear wall, and a bottom wall integrally coupled to the first front wall and the first rear wall, and pivotal pin structures integrally coupled to and extending from the first rear wall. The apparatus includes a second portion ...

20250285977. SEMICONDUCTOR STRUCTURE HAVING HIGH BREAKDOWN VOLTAGE ETCH-STOP LAYER

Abstract: The present disclosure relates to a method of forming a semiconductor structure. The method includes depositing an etch-stop layer (ESL) over a first dielectric layer. The ESL layer deposition can include: flowing a first precursor over the first dielectric layer; purging at least a portion of the f...

20250285988. DOPED WELL AND ALIGNMENT MARK FOR SEMICONDUCTOR DEVICES

Abstract: In an embodiment, a semiconductor device includes a semiconductor substrate including a first fin and a second fin; a first well, a second well and an alignment mark in the semiconductor substrate; and an isolation layer over the first fin, the second fin, the semiconductor substrate, and the alignm...

20250286007. SEMICONDUCTOR PACKAGE AND METHOD OF FORMING SAME

Abstract: In an embodiment, a method includes attaching a first package component to a first carrier, the first package component comprising: an aluminum pad disposed adjacent to a substrate; a sacrificial pad disposed adjacent to the substrate, the sacrificial pad comprising a major surface opposite the subs...

20250286267. ANTENNA APPARATUS AND METHOD

Abstract: A package structure includes a first die, an insulating material around the first die, a first antenna extending through the insulating material, wherein the first antenna includes a first conductive plate extending through the insulating material and a plurality of first conductive pillars extendin...

20250286344. OPTICAL PACKAGE AND METHOD OF MANUFACTURE

Abstract: A method includes forming a laser diode structure including an active layer sandwiched between an n-type contact layer and a p-type contact layer; forming an n-type contact on the n-type contact layer, wherein the n-type contact includes a first noble metal; forming a p-type contact on the p-type co...

20250287603. THREE-DIMENSIONAL FERROELECTRIC RANDOM ACCESS MEMORY DEVICES AND METHODS OF FORMING

Abstract: A method of forming a ferroelectric random access memory (FeRAM) device includes: forming a layer stack over a substrate, where the layer stack includes alternating layers of a first dielectric material and a word line (WL) material; forming first trenches extending vertically through the layer stac...

20250287625. NANOSTRUCTURE PROFILE IN GAA AND THE METHODS OF FORMING THE SAME

Abstract: A method includes forming a multilayer stack, which includes a plurality of semiconductor layers and a plurality of sacrificial layers located alternatingly. The method further includes forming a dummy gate stack on the multilayer stack, etching the multilayer stack to form a trench, epitaxially gro...

20250287628. Contact with a Silicide Region

Abstract: Embodiments disclosed herein relate generally to forming an effective metal diffusion barrier in sidewalls of epitaxy source/drain regions. In an embodiment, a structure includes an active area having a source/drain region on a substrate, a dielectric layer over the active area and having a sidewall...

20250287629. Semiconductor Devices and Methods of Manufacture

Abstract: Semiconductor devices using a dielectric structure and methods of manufacturing are described herein. The semiconductor devices are directed towards gate-all-around (GAA) devices that are formed over a substrate and are isolated from one another by the dielectric structure. The dielectric structure ...