Stmicroelectronics international n.v. (20250107230). SELECTIVE AND SELF-ALIGNED SOI THINNING FOR RF SWITCH APPLICATIONS
SELECTIVE AND SELF-ALIGNED SOI THINNING FOR RF SWITCH APPLICATIONS
Organization Name
stmicroelectronics international n.v.
Inventor(s)
Franck Julien of La Penne sur Huveaune FR
SELECTIVE AND SELF-ALIGNED SOI THINNING FOR RF SWITCH APPLICATIONS
This abstract first appeared for US patent application 20250107230 titled 'SELECTIVE AND SELF-ALIGNED SOI THINNING FOR RF SWITCH APPLICATIONS
Original Abstract Submitted
a transistor device comprising a silicon-on-insulator (soi) substrate having a plurality of polysilicon gates including a plurality of recessed gates and a plurality of non-recessed gates. the plurality of recessed gates being recessed in a top silicon layer of the soi substrate and the plurality of non-recessed gates being on the top silicon layer. the plurality of recessed gates comprising an upper cap portion on a bottom buried portion that is in a recess of the soi substrate. methods of manufacturing the device are provided.