= HIGH BANDWIDTH VARIABLE DOSE ION IMPLANTATION SYSTEM AND METHOD =
...tion mechanism changes the beam-to-workpiece target position while the ion beam is gated by the gating apparatus. methods for implanting ions in predetermi
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2 KB (288 words) - 11:59, 25 May 2025
= ION BEAM REFLECTOR, SUBSTRATE PROCESSING APPARATUS INCLUDING THE SAME, AND SUBSTRATE
...trate processing apparatus may comprise an ion beam reflector, and the ion beam reflector may comprise a support ring including a neutralization space, the
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2 KB (321 words) - 03:13, 21 July 2025
= ION EXTRACTION OPTICS FOR ION PROCESSING SYSTEM =
...xtraction aperture define third and fourth extraction slits, and the third beam blocker and the third extraction aperture define fifth and sixth extraction
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2 KB (336 words) - 03:13, 21 July 2025
= Shield for an Ion Implanter =
...segments, separated by connecting segments that are not exposed to the ion beam. the shield may be graphite, silicon or silicon carbide.
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2 KB (311 words) - 03:13, 21 July 2025
...ion of a negative field from the beam system during application of the ion beam by the fib device.
[[Category:Patent Applications]]
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2 KB (273 words) - 11:59, 25 May 2025
...ively, the ion beam directs ions towards a second ion store and the second ion store accumulates a sample of fragmented precursor ions for analysis in a f
[[Category:Patent Applications]]
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2 KB (317 words) - 18:57, 3 July 2025
= ION EXPOSURE METHOD AND APPARATUS =
...ined between the scan line and an axis perpendicular to an axis of the ion beam, a difference between the tilt angle and the scan angle being less than 50�
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3 KB (397 words) - 03:14, 21 July 2025
= ION GUIDE, A METHOD OF MANIPULATING IONS USING AN ION GUIDE, A METHOD OF MASS SPECTROMETRY, A MASS SPECTROMETER AND COMPUTER SOFT
...region for ejecting ions; a second outlet region for ejecting ions; and a beam splitting electrode arranged to direct a first portion of the packet of ion
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2 KB (234 words) - 19:47, 3 July 2025
...potentials supplied to an energy filter positioned in the path of the ion beam. platen position values are generated based on the first and second current
[[Category:Patent Applications]]
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2 KB (320 words) - 19:46, 3 July 2025
...THOD FOR DISTORTION MEASUREMENT AND PARAMETER SETTING FOR CHARGED PARTICLE BEAM IMAGING DEVICES AND CORRESPONDING DEVICES =
...f images. a method of setting one or more parameters of a charged particle beam imaging device based on a measure of the image distortion as well as corres
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2 KB (249 words) - 11:59, 25 May 2025
= SOURCE-DETECTOR SYNCHRONIZATION IN MULTIPLEXED SECONDARY ION MASS SPECTROMETRY =
...r the first subset of charged particles liberated by each pulse of the ion beam.
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2 KB (335 words) - 12:01, 25 May 2025
...of the beam ions, while the non-fusion collisions reduce an energy of the beam ions. a plasma focus method of neutron production is also disclosed.
[[Category:Patent Applications]]
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2 KB (324 words) - 19:44, 3 July 2025
...ased on the plurality of trapped ions during an emission of the saturation beam at the first intensity.
[[Category:Patent Applications]]
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2 KB (326 words) - 11:56, 25 May 2025
...with no significant loss in imaging quality compared to the standard round beam method of imaging.
..., e.g. electron-optical arrangement, ion-optical arrangement {(electron or ion-optical systems for localised treatment of materials ; discharge control me
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2 KB (283 words) - 11:59, 25 May 2025
= Charged Particle Beam System =
...flector and an adjustment deflector configured to adjust a trajectory of a beam to be incident on an optical element. in the system, a user interface confi
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2 KB (284 words) - 03:13, 21 July 2025
...me and the end time, and adjusting positions of the first charged particle beam by applying the determined drift compensation during an operation of the cp
...tegory:CPC_H01J37/26|H01J37/26]] (Electron or ion microscopes; Electron or ion diffraction tubes)
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2 KB (302 words) - 11:59, 25 May 2025
= REDUCED FORM FACTOR PLASMA WINDOWS POSITIONED IN A BEAM ACCELERATOR SYSTEM =
...low-pressure chamber and an ion accelerator configured to generate an ion beam; a target chamber; and a plasma window assembly interposed between and flui
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2 KB (269 words) - 13:17, 25 May 2025
= DEVICE FABRICATION METHODS WITH ION BEAM PROCESSING =
...nt covered by a first dielectric layer; performing a location specific ion beam planarizing of the first dielectric layer to form a first planarized surfac
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2 KB (255 words) - 02:58, 21 July 2025
...sult, an accelerator and a particle therapy apparatus capable of improving beam utilization efficiency as compared with the related art are provided.
...tegory:CPC_H05H13/02|H05H13/02]] (PLASMA TECHNIQUE (fusion reactors ; ion-beam tubes ; magnetohydrodynamic generators ; producing X-rays involving plasma
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2 KB (297 words) - 20:32, 3 July 2025
= PARTICLE BEAM SYSTEM =
a particle beam system includes: a multi-beam particle source configured to generate a multiplicity of particle beams; an
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2 KB (307 words) - 03:13, 21 July 2025