= HIGH BANDWIDTH VARIABLE DOSE ION IMPLANTATION SYSTEM AND METHOD =
...tion mechanism changes the beam-to-workpiece target position while the ion beam is gated by the gating apparatus. methods for implanting ions in predetermi
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2 KB (288 words) - 11:59, 25 May 2025
...ion of a negative field from the beam system during application of the ion beam by the fib device.
[[Category:Patent Applications]]
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2 KB (273 words) - 11:59, 25 May 2025
...THOD FOR DISTORTION MEASUREMENT AND PARAMETER SETTING FOR CHARGED PARTICLE BEAM IMAGING DEVICES AND CORRESPONDING DEVICES =
...f images. a method of setting one or more parameters of a charged particle beam imaging device based on a measure of the image distortion as well as corres
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2 KB (249 words) - 11:59, 25 May 2025
= SOURCE-DETECTOR SYNCHRONIZATION IN MULTIPLEXED SECONDARY ION MASS SPECTROMETRY =
...r the first subset of charged particles liberated by each pulse of the ion beam.
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2 KB (335 words) - 12:01, 25 May 2025
...ased on the plurality of trapped ions during an emission of the saturation beam at the first intensity.
[[Category:Patent Applications]]
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2 KB (326 words) - 11:56, 25 May 2025
...with no significant loss in imaging quality compared to the standard round beam method of imaging.
..., e.g. electron-optical arrangement, ion-optical arrangement {(electron or ion-optical systems for localised treatment of materials ; discharge control me
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2 KB (283 words) - 11:59, 25 May 2025
...me and the end time, and adjusting positions of the first charged particle beam by applying the determined drift compensation during an operation of the cp
...tegory:CPC_H01J37/26|H01J37/26]] (Electron or ion microscopes; Electron or ion diffraction tubes)
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2 KB (302 words) - 11:59, 25 May 2025
= REDUCED FORM FACTOR PLASMA WINDOWS POSITIONED IN A BEAM ACCELERATOR SYSTEM =
...low-pressure chamber and an ion accelerator configured to generate an ion beam; a target chamber; and a plasma window assembly interposed between and flui
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2 KB (269 words) - 13:17, 25 May 2025
= CARBON CONTAINING PRECURSORS FOR BEAM-INDUCED DEPOSITION =
...being configured to generate a beam of charged particles and to direct the beam of charged particles into the vacuum chamber. the system can include a prec
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3 KB (369 words) - 10:14, 25 May 2025
= RADIOTHERAPY TREATMENT PLANNING FOR ION ARCS =
...ving an arc as a combination of one or more sub-arcs and possibly a static beam wherein the one or more sub-arcs either overlap or have different direction
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2 KB (274 words) - 09:07, 25 May 2025
...gh the slot using a high-energy welding beam, the slot guiding the welding beam.
...D29/444]] (NON-POSITIVE-DISPLACEMENT PUMPS (engine fuel-injection pumps ; ion pumps ; electrodynamic pumps ))
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2 KB (256 words) - 10:27, 25 May 2025
...ng of a source material () to be evaporated and/or sublimated by the laser beam () within the reaction chamber (), and a substrate arrangement () for provi
...NVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-co
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3 KB (465 words) - 10:14, 25 May 2025
= SYSTEMS AND METHODS FOR MANUFACTURING STRUCTURES USING ELECTRON-BEAM PHYSICAL VAPOR DEPOSITION =
...nal space of the structure when the bladder is inflated. the one or more e-beam physical vapor deposition systems configured to form a metallic structural
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3 KB (354 words) - 10:14, 25 May 2025
a source of a beam of charged particles (fig. 1, unlabeled source connected to accelerator 12)
...or coupled to the source and that accelerates the charged particles in the beam (fig. 1, element 12); and
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14 KB (2,152 words) - 01:37, 23 May 2025
...E ANGLE GRAPHITE FOR PARTICLE CONTROL WITH DEDICATED LOW SPUTTER YIELD ION BEAM
...E ANGLE GRAPHITE FOR PARTICLE CONTROL WITH DEDICATED LOW SPUTTER YIELD ION BEAM
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18 KB (2,691 words) - 17:26, 22 May 2025
...E) process ([0074], Figure 6, #118a is used as etching mask in an reactive ion etching (RIE) process which is a specific etching method recited in claim 6
...ructure, and using the protective layer as a mask, performing a second ion beam etching to remove at least a portion of the MTJ stack structure and at leas
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22 KB (3,294 words) - 17:04, 22 May 2025
...skilled in the relevant art that the inventor or a joint inventor, or for applications subject to pre-AIA 35 U.S.C. 112, the inventor(s), at the time the applica
...ottom electrode layer under an ion beam etch condition employed in the ion beam etch process is in a range from 0.8 to 1.3; and
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43 KB (6,636 words) - 16:31, 25 May 2025
DIRECTIONAL BEAM PROCESS
DIRECTIONAL BEAM PROCESS
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15 KB (2,197 words) - 15:31, 25 May 2025
...arks, certification marks, and collective marks) are permissible in patent applications, the proprietary nature of the marks should be respected and every effort m
...ly claim the subject matter which the inventor or a joint inventor (or for applications subject to pre-AIA 35 U.S.C. 112, the applicant), regards as the invention
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26 KB (3,850 words) - 13:42, 25 May 2025
...or 40A, and rotating the polarization direction of one output signal light beam by 90° and then multiplexing the two output signal light beams allows a dua
...d paragraphs 85-87, and 103-105); (When the passive waveguide is formed by ion implantation, since no protrusive protrusions are generated at the boundary
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19 KB (2,801 words) - 13:53, 25 May 2025
