Sk hynix inc. (20250098161). MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
Organization Name
Inventor(s)
Yun Cheol Han of Icheon-si Gyeonggi-do KR
MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
This abstract first appeared for US patent application 20250098161 titled 'MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
Original Abstract Submitted
provided herein is a method of manufacturing a memory device. the method may include forming an ion implantation region in a portion of an outer portion of an underlying structure by implanting ions into the underlying structure, transforming the ion implantation region into an etch stop pattern, forming a target structure on the underlying structure including the etch stop pattern, and performing an etching process to form first holes and second holes in the target structure, wherein the first width of the first holes is different than the second width of the second holes. the etching process is performed until the etch stop pattern is exposed through the first holes and the second holes.
