Sk hynix inc. (20250095694). MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
Organization Name
Inventor(s)
Jin Ha Kim of Icheon-si Gyeonggi-do KR
MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
This abstract first appeared for US patent application 20250095694 titled 'MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
Original Abstract Submitted
a memory device, and a method of manufacturing the same, includes interlayer insulation layers spaced apart from each other and stacked, gate lines formed between the interlayer insulation layers, and a plug vertically passing through the interlayer insulation layers and the gate lines. each of the gate lines includes a barrier layer formed along an inner wall of the interlayer insulation layer and the plug, a first conductive layer surrounded by the barrier layer, and a second conductive layer surrounded by the first conductive layer and having a grain size different from a grain size of the first conductive layer. a volume of the second conductive layer is variable along a direction in which the gate lines extend.