SEMICONDUCTOR DEVICE INCLUDING MAGNETIC TUNNEL JUNCTION STRUCTURE

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SEMICONDUCTOR DEVICE INCLUDING MAGNETIC TUNNEL JUNCTION STRUCTURE

This abstract first appeared for US patent application 20250008843 titled 'SEMICONDUCTOR DEVICE INCLUDING MAGNETIC TUNNEL JUNCTION STRUCTURE

Original Abstract Submitted

in an embodiment, a semiconductor device includes a spin orbit torque (sot) line extending in a first direction; an electrode layer spaced apart from the sot line in a third direction; and a magnetic tunnel junction structure interposed between the sot line and the electrode layer, and including a free layer adjacent to the sot line in the third direction, a pinned layer adjacent to the electrode layer in the third direction, and a tunnel barrier layer interposed between the free layer and the pinned layer, wherein the magnetic tunnel junction structure includes a first portion overlapping the sot line and a second portion not overlapping the sot line in a second direction, the electrode layer overlaps at least a portion of the second portion, and a thickness of the free layer in the first portion is greater than a thickness of the free layer in the second portion.