MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

Organization Name

Inventor(s)

Won Geun Choi of Icheon-si Gyeonggi-do (KR)

Jeong Hwan Kim of Icheon-si Gyeonggi-do (KR)

Jung Shik Jang of Icheon-si Gyeonggi-do (KR)

MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

This abstract first appeared for US patent application 20240420740 titled 'MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

Original Abstract Submitted

a memory device, and a method of manufacturing the same, includes a first select line including a first cell area, a second select line including a second cell area disposed in a first direction from the first cell area, a first separation pattern extending in a second direction intersecting the first direction between the first cell area and the second cell area, second separation patterns extending from both ends of the first separation pattern in the first direction and a third direction opposite the first direction, respectively, and a third separation pattern extending from at least one of the second separation patterns in the second direction, and disposed in a direction opposite the first separation pattern with respect to the at least one second separation pattern.