Sk hynix inc. (20240315151). SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

Organization Name

sk hynix inc.

Inventor(s)

Yong Hun Sung of Icheon (KR)

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240315151 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

The method described in the abstract involves fabricating a semiconductor device by forming various layers with and without the application of AC power.

• Lower electrode layer containing carbon is formed by applying AC power.
• Memory layer is formed over the lower electrode layer.
• Upper electrode layer containing carbon is formed over the memory layer without applying AC power.

Potential Applications: - Memory devices - Semiconductor manufacturing - Electronics industry

Problems Solved: - Efficient fabrication of semiconductor devices - Control over the properties of electrode layers

Benefits: - Improved performance of semiconductor devices - Enhanced control over the manufacturing process

Commercial Applications: Title: Semiconductor Device Fabrication Method for Memory Devices This technology can be used in the production of memory devices for various electronic applications, potentially impacting the semiconductor industry.

Questions about Semiconductor Device Fabrication Method: 1. How does the use of AC power affect the formation of the lower electrode layer? 2. What are the advantages of incorporating carbon into the electrode layers?

Original Abstract Submitted

a method for fabricating a semiconductor device includes forming a lower electrode layer containing carbon by applying ac power; forming a memory layer over the lower electrode layer; and forming an upper electrode layer containing carbon over the memory layer without applying ac power.