Sk hynix inc. (20240306385). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE simplified abstract
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Won Geun Choi of Icheon-si Gyeonggi-do (KR)
Seok Min Choi of Icheon-si Gyeonggi-do (KR)
Rho Gyu Kwak of Icheon-si Gyeonggi-do (KR)
Jung Shik Jang of Icheon-si Gyeonggi-do (KR)
In Su Park of Icheon-si Gyeonggi-do (KR)
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240306385 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
The semiconductor device described in the patent application features a gate structure with conductive and insulating layers stacked alternately. Tapered supports within the gate structure change width between different levels, as do the tapered contact structures located between them. The tapers of the gate structure and contact structure are mirror images of each other.
- Gate structure with conductive and insulating layers
- Tapered supports with changing width at different levels
- Tapered contact structures between supports
- Mirror image tapers of gate structure and contact structure
Potential Applications: - Semiconductor manufacturing - Integrated circuits - Electronics industry
Problems Solved: - Enhancing semiconductor device performance - Improving contact structure design
Benefits: - Increased efficiency in semiconductor devices - Enhanced electrical connectivity - Potential for smaller and more powerful devices
Commercial Applications: Title: Advanced Semiconductor Devices for Enhanced Performance This technology could be utilized in the production of high-performance electronic devices, leading to improved functionality and efficiency in various industries such as telecommunications, computing, and consumer electronics.
Questions about the technology: 1. How does the mirror image taper design of the gate structure and contact structure contribute to the overall performance of the semiconductor device? 2. What are the specific advantages of using tapered supports and contact structures in semiconductor devices?
Original Abstract Submitted
a semiconductor device may include: a gate structure including conductive layers and insulating layers that are alternately stacked. tapered supports formed in the gate structure layers have a first width at a first level of the layers and a second width smaller than the first width at a second level of the layers. a tapered contact structure is located between the tapered supports in the gate structure having a third width at the first level and a fourth width larger than the third width at the second level. the gate structure taper and the contact structure taper are “mirror images” of each other.
